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ST Releases MasterGaN4 Devices for High-Efficiency Power Conversion up to 200 Watts


The MasterGaN4 Devices integrate two symmetrical 650V gallium nitride (GaN) power transistors alongside optimized gate drivers and circuit protection


STMicroelectronics has released the new MasterGaN4* power packages, which integrate two symmetrical 650V gallium nitride (GaN) power transistors with 225mΩ RDS(on), alongside optimized gate drivers and circuit protection to simplify the design of high-efficiency power-conversion applications up to 200W.

Click for Larger Image - ST Releases MasterGaN4 Devices for High-Efficiency Power Conversion up to 200 Watts The latest addition to ST’s MasterGaN family, MasterGaN4 simplifies design using wide-bandgap GaN power semiconductors by taking away the complex gate-control and circuit-layout challenges. With inputs tolerant of voltages from 3.3V to 15V, MasterGaN4 can be controlled by connecting the packages directly to Hall-effect sensors or a CMOS device such as a microcontroller, DSP, or FPGA.

Leveraging the higher operating frequencies enabled by the superior switching performance of GaN transistors, as well as their increased efficiency that reduces thermal dissipation, designers can choose small magnetic components and heatsinks to build more compact and lightweight power supplies, chargers, and adapters. MasterGaN4 is ideally suited to use in symmetrical half-bridge topologies as well as soft-switching topologies such as active clamp flyback and active clamp forward.

Leveraging the higher operating frequencies enabled by the superior switching performance of GaN transistors, as well as their increased efficiency that reduces thermal dissipation, designers can choose small magnetic components and heatsinks to build more compact and lightweight power supplies, chargers, and adapters. MasterGaN4 is ideally suited to use in symmetrical half-bridge topologies as well as soft-switching topologies such as active clamp flyback and active clamp forward.

Features of the MASTERGAN4 600V Half-Bridge Driver include:

  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 225 mΩ
    • IDS(MAX) = 6.5 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown funtionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Over temperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design

More information on the MASTERGAN4 600V Half-Bridge Driver with two enhancement mode GaN HEMT is available on the ST Web site at STMicroelectronics MASTERGAN4 product page.

*MasterGaN is a registered and/or unregistered trademark of STMicroelectronics International NV or its affiliates in the EU and/or elsewhere


The company's Web site address is www.st.com.
[Reprinted with kind permission from STMicroelectronics - Release Date, 12th April, 2021]