Fairchild Releases New Power MOSFET With Improved Efficiency
New 100V N-channel Power MOSFET also Offers Reduced Voltage Ringing and Lower EMI
Fairchild has launched the flagship device of the company's newest generation of 100V N-channel power MOSFETs,
the FDMS86181 100V Shielded Gate PowerTrench® MOSFET.
The FDMS86181 is the first part in Fairchild's new generation of PowerTrench MOSFETs and
it delivers substantial improvements in efficiency, reduced voltage ringing and
lower electromagnetic interference (EMI) for power supplies, motor drives and
other applications requiring a 100V MOSFET.
Fairchild was an early pioneer of the successful PowerTrench MOSFET nearly 25 years ago and this latest generation of PowerTrench devices continues to keep the company at the forefront of MOSFET technology development, ahead of competitors and able meet customers' most demanding system power requirements.
“Our new 100V N-channel FET is a major advance over our previous, industry-leading generation of PowerTrench MOSFETs, and performs dramatically better than its competitors in virtually every performance category, from efficiency through reliability,” said Suman Narayan, Vice President and General Manager of Fairchild's iFET business unit.
The primary advantages of the new FDMS86181 are its 40 percent reduction in Rdson which lowers conduction losses and its minimized gate charge (Qg) which reduces switching losses. The exceptionally low Qrr of the FDMS86181 virtually eliminates the voltage overshoots that cause ringing, which allows for the reduction or elimination of snubbers in product designs and reduces EMI. This unique advantage of the FDMS86181 allows designers to both reduce product size and bill-of-materials (BOM) costs.
For more information on the Fairchild FDMS86181 N-Channel MOSFET, visit the ON Semiconductor website
ON Semiconductor FDMS86181 product page
The company's Web site address is www.onsemi.com.
[Reprinted with kind permission from Fairchild Semiconductor - Release Date: 21st March, 2016]