Futurlec - The Electronic Components and Semiconductor Superstore
View Cart

Microchip Releases New High Density 1Mbit Serial SRAM

New 512kb and 1Mb SPI Devices Feature the Industry's Largest Densities and Speed

Microchip has just expanded its serial SRAM portfolio with four new devices that feature the industry's largest densities and speeds. They are also the industry's first with 5V operation, which remains prevalent in automotive and industrial applications. These 512 Kb and 1 Mb SPI devices maintain the portfolio's low power consumption and small, 8-pin packages at the low starting cost of $1.16 each in 10,000-unit quantities. Speeds of up to 80 Mbps are achieved via the quad-SPI, or SQIַ, protocol, providing the zero write-cycle times with near instantaneous data movement needed for offloading graphics, data buffering, data logging, displays, math, audio, video and other data-intensive functions.

Click for Larger Image - Microchip Releases New High Density 1Mbit Serial SRAM Two additional family members-the 23LCV512 and 23LCV1024-offer the industry's most cost-effective options for non-volatile, unlimited-endurance RAM, via battery backup. In fact, with their fast dual-SPI (SDI) throughput of 40 Mbps and low active and sleep currents, these serial NVSRAM devices feature high-speed operation without the high pin counts of parallel NVSRAM, and comparable power consumption to FRAM, all at a fraction of the price. This is beneficial for applications such as meters, black boxes and other data recorders, which require unlimited endurance or instantaneous writes along with non-volatile storage.

“Most embedded applications need more RAM at some point during their design. These new 1 Mbit SRAMs enable designers to fill that gap at a much lower cost than moving to a larger microcontroller or processor, and with lower power consumption, pin counts and cost than parallel SRAM,” said Randy Drwinga, vice president of Microchip's Memory Products Division. “For applications requiring non-volatile RAM, we've also added our first two devices with battery backup, which are significantly lower cost than any other type of non-volatile RAM.”

Click for Larger Image - Microchip Releases New High Density 1Mbit Serial SRAM “The EEPROM market has completely moved to serial interfaces, and the Flash market is rapidly making this transition, due to the higher cost, board space and power consumption of parallel devices. We expect SRAM to follow this trend, and Microchip's serial SRAM portfolio offers compelling options to the embedded market,” Drwinga added.

Features of the 23LCV1024 Serial SRAM

  • SPI-compatible Bus Interface- 20 MHz Clock rate- SPI/SDI Mode
  • Low-Power CMOS Technology:- Read Current: 3 mA at 3.6V, 20 MHz- Standby Current: 4 µA Max. at +85°C
  • Unlimited read and write cycles
  • Zero write time
  • 128K x 8-bit organization- 32 Byte Page
  • Battery-backed SRAM Support via Vbat Pin- Automatic switchover to Vbat
  • Sequential Mode reads and writes
  • High Reliability
  • Temperature Ranges Supported: -40°C to +85°C
  • Pb-Free and RoHS Compliant, Halogen Free
  • 8 Lead SOIC, TSSOP and PDIP Packages

More information on the 23LCV1024 Serial SRAM can be found on the Microchip Web site at Microchip 23LCV1024 product page

Note: The Microchip name and the Microchip logo are registered trademarks of Microchip Technology Incorporated in the U.S.A and other countries. All other trademarks mentioned herein are the property of their respective companies.

The company's Web site address is www.microchip.com
[Reprinted with kind permission from Microchip Corporation]