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INFD5940TRANS - Infrared Phototransistor 940nm 5mm Round LED Technical Data - Buy INFD5940TRANS


Photograph
INFD5940TRANS - Infrared Phototransistor 940nm 5mm Round LED
Features

Water Clear Lens

Excellent Performance Specifications

Infrared Transistor

RoHS Compliant


Pin Description
Pin Number Description
1 Cathode
2 Anode
Dimensional Drawing
LED Dimension Drawing

Technical Data

Absolute Maximum Ratings

Operating Free Air Temperature

-40°C to +85°C

Storage Temperature Range

-40°C to +100°C

Lead Soldering Temperature

260°C


Electrical Characteristics

Symbol Parameter Conditions Min Typ Max Units
Vceo Collector-Emitter Voltage Ta=25oC     30 V
Veco Emitter-Collector Voltage Ta=25oC     5 V
Ic Collector Current Ta=25oC     20 mA
BVceo Collector-Emitter Breakdown Voltage Ic=100µA 30     V
BVeco Emitter-Collector Breakdown Voltage Ic=100µA 5     V
BVce(sat) Collector-Emitter Saturation Voltage Ic=0.7mA     0.4 V
Iceo Collector Dark Current Vce=20V     100 nA
Ic(on) On-State Collector Current Vce=5V 0.7 2.0   nA
Pd Max Power Dissipation Ta=25oC     75 mW
  Reception Angle     30   Degrees
  Peak Sensitivity Wavelength     940   nm
  Range of Spectral Bandwidth   400   1100 nm


Technical Data

Data Sheet

Datasheet for INFD5940TRANS







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